2DB1697-13
TRANS PNP 12V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1697-13, a PNP Bipolar Junction Transistor (BJT), offers a 12V collector-emitter breakdown voltage and a maximum collector current of 2A. This device features a transition frequency of 140MHz and a power dissipation of 900mW. With a minimum DC current gain (hFE) of 270 at 200mA and 2V, it provides reliable amplification. The saturation voltage (Vce Saturation) is a maximum of 180mV at 50mA and 1A. The 2DB1697-13 is supplied in a SOT-89-3 surface mount package, also known as TO-243AA. It is suitable for applications in consumer electronics and industrial control systems. Operating temperature range is -55°C to 150°C. The component is delivered on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 900 mW |
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