2DB1424R-13
TRANS PNP 20V 3A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1424R-13 is a PNP bipolar junction transistor designed for general purpose applications. This component features a maximum collector current (Ic) of 3A and a collector-emitter breakdown voltage (Vce) of 20V. With a minimum DC current gain (hFE) of 180 at 100mA and 2V, and a transition frequency (fT) of 220MHz, it offers efficient amplification characteristics. The transistor exhibits a Vce(sat) of 500mV at 100mA and 2A, with a collector cutoff current (Icbo) of 100nA. Housed in a SOT-89-3 package, this surface mount device has a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C. It is supplied on tape and reel. This part finds application in power management and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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