2DB1188P-13
TRANS PNP 32V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1188P-13 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 2A. It features a transition frequency of 120MHz and a maximum power dissipation of 1W. The device achieves a minimum DC current gain (hFE) of 82 at 500mA collector current and 3V collector-emitter voltage. Collector cutoff current (ICBO) is specified at a maximum of 100nA. The saturation voltage (Vce Sat) is a maximum of 800mV at 200mA base current and 2A collector current. Packaged in a SOT-89-3 (TO-243AA) for tape and reel distribution, this transistor is suitable for use in various industrial and consumer electronics power management circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | SOT-89-3 |
| Grade | - |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
| Qualification | - |
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