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2DB1188P-13

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2DB1188P-13

TRANS PNP 32V 2A SOT89-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated 2DB1188P-13 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 32V and a continuous collector current capability of up to 2A. It features a transition frequency of 120MHz and a maximum power dissipation of 1W. The device achieves a minimum DC current gain (hFE) of 82 at 500mA collector current and 3V collector-emitter voltage. Collector cutoff current (ICBO) is specified at a maximum of 100nA. The saturation voltage (Vce Sat) is a maximum of 800mV at 200mA base current and 2A collector current. Packaged in a SOT-89-3 (TO-243AA) for tape and reel distribution, this transistor is suitable for use in various industrial and consumer electronics power management circuits. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 500mA, 3V
Frequency - Transition120MHz
Supplier Device PackageSOT-89-3
Grade-
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max1 W
Qualification-

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