2DB1132Q-13
TRANS PNP 32V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated PNP Bipolar Junction Transistor, part number 2DB1132Q-13. This AEC-Q101 qualified device features a 32V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 190MHz and a minimum DC current gain of 120 at 100mA and 3V, it is suitable for demanding applications. The SOT-89-3 package (TO-243AA) facilitates surface mounting, and the device offers a maximum power dissipation of 1W. The saturation voltage is specified at 500mV for a base current of 50mA and collector current of 500mA. Operating temperature ranges from -55°C to 150°C. This component is commonly found in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | SOT-89-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
| Qualification | AEC-Q101 |
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