2DB1132P-13
TRANS PNP 32V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1132P-13 is a PNP bipolar junction transistor offering a 32V collector-emitter breakdown voltage and a maximum collector current of 1A. This device features a transition frequency of 190MHz and a maximum power dissipation of 1W. With a guaranteed minimum DC current gain (hFE) of 82 at 100mA and 3V, it ensures reliable amplification. The transistor exhibits a Vce(sat) of 500mV at 50mA/500mA, critical for efficient switching applications. Packaged in a SOT-89-3 (TO-243AA) surface mount configuration, it is supplied on tape and reel. This component is suitable for applications in consumer electronics and industrial control systems, where efficient signal amplification and switching are required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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