2DB1119S-13
TRANS PNP 25V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1119S-13 is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. This SOT-89-3 packaged device offers a collector-emitter breakdown voltage (Vce) of 25V and a continuous collector current (Ic) capability of up to 1A. It features a maximum power dissipation of 1W and a transition frequency of 200MHz. The transistor exhibits a minimum DC current gain (hFE) of 140 at 50mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 700mV for 50mA base current and 500mA collector current. The device operates within a temperature range of -55°C to +150°C. This component finds use in various industrial and consumer electronics, including power management and signal conditioning circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 50mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1 W |
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