2DA2018-7
TRANS PNP 12V 0.5A SOT523Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DA2018-7 is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector current (Ic) capability of up to 500 mA and a collector-emitter breakdown voltage (Vce) of 12 V. It features a transition frequency (fT) of 260 MHz and a maximum power dissipation of 150 mW. The DC current gain (hFE) is specified at a minimum of 270 at 10 mA collector current and 2 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250 mV at 10 mA base current and 200 mA collector current. The transistor is housed in a compact SOT-523 package and is supplied on tape and reel. Operating temperature range is -55°C to 150°C. This device is suitable for use in switching and amplification circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA, 2V |
| Frequency - Transition | 260MHz |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 150 mW |
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