2DA1213O-13
TRANS PNP 50V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DA1213O-13 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device offers a 50V collector-emitter breakdown voltage and a continuous 2A collector current capability. With a transition frequency of 160MHz and a maximum power dissipation of 1W, it is suitable for use in consumer electronics and industrial control systems requiring efficient signal processing. The transistor exhibits a minimum DC current gain of 70 at 500mA and 2V, with a Vce saturation of 500mV at 50mA and 1A. It features a low collector cutoff current of 100nA (ICBO) and operates across a temperature range of -55°C to 150°C. The 2DA1213O-13 is supplied in a SOT-89-3 surface mount package, delivered on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |