DGD2190S8-13
IC GATE DRVR HALF-BRIDGE 8SOManufacturer: Diodes Incorporated
Categories: Gate Drivers
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Diodes Incorporated DGD2190S8-13 is a half-bridge gate driver IC designed for efficient control of power MOSFETs and IGBTs. This non-inverting, dual-channel driver provides independent control for each half-bridge leg, delivering robust performance with peak output currents of 4.5A source and 4.5A sink. The device supports high-side voltage operation up to 600V, facilitated by an integrated bootstrap circuit. Featuring typical rise and fall times of 25ns and 20ns respectively, the DGD2190S8-13 ensures rapid switching transitions. It operates with a logic voltage range of 0.8V for VIL and 2.5V for VIH, and a supply voltage between 10V and 20V. The IC is housed in an 8-SOIC (0.154", 3.90mm width) surface-mount package, supplied on tape and reel. This component is frequently utilized in power supply units, motor control applications, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SO |
| Rise / Fall Time (Typ) | 25ns, 20ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 4.5A, 4.5A |
| Programmable | Not Verified |
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