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DGD21904S14-13

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DGD21904S14-13

IC GATE DRVR HALF-BRIDGE 14SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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Diodes Incorporated's DGD21904S14-13 is a dual, half-bridge gate driver designed for controlling IGBT and N-Channel MOSFETs. This non-inverting IC features independent channels and delivers robust performance with peak output currents of 4.5A sourcing and sinking. The high-side voltage capability extends up to 600V, facilitated by a bootstrap mechanism. Operating within a supply voltage range of 10V to 20V, the DGD21904S14-13 exhibits typical rise and fall times of 25ns and 20ns respectively. Logic thresholds are set at 0.8V for VIL and 2.5V for VIH. This component is manufactured by Diodes Incorporated and is available in a 14-SOIC surface mount package, supplied on tape and reel. It is suitable for applications in power conversion, motor control, and industrial power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case14-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package14-SO
Rise / Fall Time (Typ)25ns, 20ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)4.5A, 4.5A
ProgrammableNot Verified

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