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DGD2181S8-13

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DGD2181S8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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The Diodes Incorporated DGD2181S8-13 is a half-bridge gate driver IC featuring independent channels and a non-inverting input. This device is designed to drive IGBT and N-Channel MOSFETs, providing peak output currents of 1.9A source and 2.3A sink. It supports a high-side voltage of up to 600V via a bootstrap mechanism. The DGD2181S8-13 operates with a supply voltage range of 10V to 20V and features typical rise and fall times of 40ns and 20ns, respectively. Logic thresholds are set at 0.8V (VIL) and 2.5V (VIH). Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, this component is suitable for applications in industrial power supplies, motor control, and lighting. It is supplied in Tape & Reel (TR) packaging and operates across an industrial temperature range of -40°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)40ns, 20ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)1.9A, 2.3A
ProgrammableNot Verified

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