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DGD2117S8-13

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DGD2117S8-13

IC GATE DRVR HIGH-SIDE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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Diodes Incorporated DGD2117S8-13 is a high-side gate driver IC featuring a non-inverting input. This single-channel driver supports IGBT and N-Channel MOSFET gate control, with a peak output current capability of 290mA sourcing and 600mA sinking. It operates with a supply voltage range of 10V to 20V and accommodates a maximum bootstrap voltage of 600V. The device exhibits typical rise and fall times of 75ns and 35ns, respectively. Logic threshold levels are set at 6V for VIL and 9.5V for VIH. Designed for surface mounting, it is provided in an 8-SOIC package on tape and reel. The DGD2117S8-13 is suitable for applications in industrial power supplies, motor control, and electric vehicle powertrains. Operating temperature range is -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)75ns, 35ns
Channel TypeSingle
Driven ConfigurationHigh-Side
Number of Drivers1
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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