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DGD2108S8-13

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DGD2108S8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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Diodes Incorporated DGD2108S8-13 is a half-bridge gate driver integrated circuit featuring independent channels and non-inverting inputs. This device is designed to drive high-side and low-side N-channel MOSFETs or IGBTs. It offers peak output currents of 290mA sourcing and 600mA sinking. The DGD2108S8-13 supports a high-side bootstrap voltage of up to 600V and operates with supply voltages ranging from 10V to 20V. Typical rise and fall times are 100ns and 35ns respectively. The logic voltage thresholds for VIH and VIL are 0.6V and 2.5V. Packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount configuration, this component is suitable for applications in power supply, motor control, and industrial automation sectors. It operates within an ambient temperature range of -40°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)100ns, 35ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.6V, 2.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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