DGD2106S8-13
IC GATE DRVR HALF-BRIDGE 8SOManufacturer: Diodes Incorporated
Categories: Gate Drivers
Quality Control: Learn More
Diodes Incorporated DGD2106S8-13 is a dual, half-bridge gate driver IC designed for driving IGBT and N-channel MOSFET power switches. This non-inverting device features independent channels with peak output currents of 290mA sourcing and 600mA sinking. It supports a high-side voltage of up to 600V, enabling operation with high-voltage power devices. The DGD2106S8-13 operates from a supply voltage range of 10V to 20V, with typical rise and fall times of 100ns and 35ns respectively. Logic input thresholds are set at 0.6V for VIL and 2.5V for VIH. This component is housed in an 8-SOIC (0.154", 3.90mm width) surface mount package and is supplied on tape and reel. It is commonly utilized in power supply, motor control, and industrial applications. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SO |
| Rise / Fall Time (Typ) | 100ns, 35ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.6V, 2.5V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
DGD0503FN-7
IC GATE DRV HALF-BRDG DFN3030-10
DGD0227S8-13
IC GATE DRVR LOW-SIDE 8SOIC
DGD2104AS8-13
IC GATE DRVR HALF-BRIDGE 8SO
