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DGD2104S8-13

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DGD2104S8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

Quality Control: Learn More

Diodes Incorporated DGD2104S8-13 is a half-bridge gate driver IC designed for driving N-channel MOSFETs and IGBTs. This device features a non-inverting input and supports a bootstrap voltage up to 600V. It provides two independent gate drive channels with peak output currents of 290mA sourcing and 600mA sinking. The DGD2104S8-13 operates from a supply voltage range of 10V to 20V, with typical rise and fall times of 70ns and 35ns respectively. Logic thresholds are set at 0.8V for VIH and 2.5V for VIL. This component is surface-mounted in an 8-SOIC package and is supplied on tape and reel. It is suitable for applications in power conversion and motor control systems. The operating temperature range is -40°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)70ns, 35ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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