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DGD2104AS8-13

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DGD2104AS8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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The Diodes Incorporated DGD2104AS8-13 is a half-bridge gate driver IC, featuring two non-inverting channels. This component is designed for driving IGBTs and N-Channel MOSFETs in half-bridge configurations. It offers a peak output current of 210mA source and 360mA sink, with a high-side voltage capability up to 600V when using a bootstrap supply. The logic input thresholds are specified at 0.8V (VIL) and 2.5V (VIH). With a supply voltage range of 10V to 20V, the DGD2104AS8-13 exhibits typical rise and fall times of 100ns and 50ns, respectively. Encased in an 8-SOIC package and supplied on tape and reel, this device operates across an industrial temperature range of -40°C to 150°C. It finds application in power conversion systems across automotive, industrial, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)100ns, 50ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)210mA, 360mA
ProgrammableNot Verified

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