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DGD2103S8-13

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DGD2103S8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

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The Diodes Incorporated DGD2103S8-13 is a dual, half-bridge gate driver designed for high-performance applications. This device features independent channels, supporting both inverting and non-inverting logic inputs with a 0.8V VIL and 2.5V VIH threshold. It is optimized for driving IGBT and N-Channel MOSFETs, with a high-side voltage capability up to 600V when utilizing bootstrap techniques. The DGD2103S8-13 offers a peak output current of 290mA sourcing and 600mA sinking, with typical rise and fall times of 100ns and 35ns respectively. Operating within a supply voltage range of 10V to 20V and an extended temperature range of -40°C to 150°C, this component is suitable for power conversion systems, motor control, and industrial power supplies. Supplied in an 8-SO package on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeInverting, Non-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)100ns, 35ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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