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DGD2103AS8-13

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DGD2103AS8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

Quality Control: Learn More

Diodes Incorporated DGD2103AS8-13 is a dual half-bridge gate driver designed for driving power MOSFETs and IGBTs. This device offers independent gate drive channels with peak output currents of 290mA source and 600mA sink. It supports a high side voltage up to 600V, making it suitable for applications requiring high voltage switching. The DGD2103AS8-13 features inverting and non-inverting input logic, with VIL and VIH thresholds at 0.8V and 2.5V respectively. Typical rise and fall times are 100ns and 50ns. Operating from a supply voltage range of 10V to 20V, it is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package. This component is utilized in power supply, motor control, and industrial automation sectors. The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeInverting, Non-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)100ns, 50ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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