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DGD2101S8-13

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DGD2101S8-13

IC GATE DRVR HALF-BRIDGE 8SO

Manufacturer: Diodes Incorporated

Categories: Gate Drivers

Quality Control: Learn More

Diodes Incorporated's DGD2101S8-13 is a half-bridge gate driver IC featuring independent channels and a non-inverting input. This 8-SOIC package device is designed for driving IGBT and N-Channel MOSFET devices in half-bridge configurations. It offers a peak output current of 290mA sourcing and 600mA sinking, with typical rise and fall times of 70ns and 35ns respectively. The high-side voltage capability extends to 600V using a bootstrap circuit. Operating across a wide temperature range of -40°C to 150°C (TJ), the DGD2101S8-13 is suitable for power supply, motor control, and industrial applications. The device operates from a supply voltage of 10V to 20V and features logic voltage thresholds of 0.8V (VIL) and 2.5V (VIH). Supplied on tape and reel, this component facilitates surface mount assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SO
Rise / Fall Time (Typ)70ns, 35ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)290mA, 600mA
ProgrammableNot Verified

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