DGD2012S8-13
IC GATE DRV HALF-BRIDGE 8SO 2.5KManufacturer: Diodes Incorporated
Categories: Gate Drivers
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Diodes Incorporated's DGD2012S8-13 is a half-bridge gate driver IC featuring independent channels and non-inverting inputs. This device is designed to drive N-channel MOSFETs with a supply voltage range of 10V to 20V. It offers robust performance with peak output currents of 1.9A source and 2.3A sink. The high-side voltage capability extends to 200V with bootstrap operation. Typical rise and fall times are 40ns and 20ns respectively. The DGD2012S8-13 is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied on tape and reel. This component is suitable for applications in power supply, motor control, and industrial automation sectors. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 200 V |
| Supplier Device Package | 8-SO |
| Rise / Fall Time (Typ) | 40ns, 20ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 1.9A, 2.3A |
| Programmable | Not Verified |
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