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ZXMP3F37DN8TA

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ZXMP3F37DN8TA

MOSFET 2P-CH 30V 5.7A 8SO

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated ZXMP3F37DN8TA is a dual P-channel MOSFET array in an 8-SOIC package. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.7A at 25°C. The device exhibits a low Rds(On) of 25mOhm at 7.1A and 10V, with a maximum power dissipation of 1.81W. It operates with a logic-level gate and has a gate charge (Qg) of 31.6nC at 10V. The input capacitance (Ciss) is a maximum of 1678pF at 15V. This surface mount component is designed for operation across a wide temperature range of -55°C to 150°C. The ZXMP3F37DN8TA is utilized in applications such as battery management, power switching, and motor control within the consumer electronics and industrial automation sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.81W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.7A
Input Capacitance (Ciss) (Max) @ Vds1678pF @ 15V
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs31.6nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO

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