ZXMN6A11DN8TC
MOSFET 2N-CH 60V 2.5A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN6A11DN8TC is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a Drain-Source voltage (Vdss) of 60V and a continuous Drain current (Id) of 2.5A at 25°C. The ZXMN6A11DN8TC offers a low Rds(on) of 120mOhm maximum at 2.5A and 10V Vgs, coupled with a logic-level gate drive for enhanced compatibility. Key electrical parameters include a Gate Charge (Qg) of 5.7nC maximum at 10V and Input Capacitance (Ciss) of 330pF maximum at 40V. With a maximum power dissipation of 1.8W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for use in automotive and industrial electronics. The ZXMN6A11DN8TC is provided in an 8-SOIC surface mount package, supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 40V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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