ZXMN6A09DN8TC
MOSFET 2N-CH 60V 4.3A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN6A09DN8TC is a dual N-channel MOSFET array designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 4.3A at 25°C. The device offers low on-resistance of 40mOhm (Max) at 8.2A and 10V, along with a logic level gate for enhanced control. Key parameters include a Gate Charge (Qg) of 24.2nC (Max) at 5V and an Input Capacitance (Ciss) of 1407pF (Max) at 40V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it supports a maximum power dissipation of 1.25W and operates across an industrial temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power management, automotive electronics, and industrial control systems. The ZXMN6A09DN8TC is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1407pF @ 40V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 8.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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