ZXMN3A06DN8TC
MOSFET 2N-CH 30V 4.9A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN3A06DN8TC is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 4.9A at 25°C. The low on-resistance (Rds On) of 35mOhm at 9A and 10V gate-source voltage, combined with a logic-level gate feature, optimizes performance in battery-powered devices and power management systems. With a maximum power dissipation of 1.8W and an operating temperature range of -55°C to 150°C, the ZXMN3A06DN8TC is housed in an 8-SO surface mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 17.5nC maximum at 10V and input capacitance (Ciss) of 796pF maximum at 25V. This device is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 796pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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