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ZXMN3A06DN8TC

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ZXMN3A06DN8TC

MOSFET 2N-CH 30V 4.9A 8SO

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated ZXMN3A06DN8TC is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 4.9A at 25°C. The low on-resistance (Rds On) of 35mOhm at 9A and 10V gate-source voltage, combined with a logic-level gate feature, optimizes performance in battery-powered devices and power management systems. With a maximum power dissipation of 1.8W and an operating temperature range of -55°C to 150°C, the ZXMN3A06DN8TC is housed in an 8-SO surface mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 17.5nC maximum at 10V and input capacitance (Ciss) of 796pF maximum at 25V. This device is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.8W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.9A
Input Capacitance (Ciss) (Max) @ Vds796pF @ 25V
Rds On (Max) @ Id, Vgs35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs17.5nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device Package8-SO

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