ZXMN3A04DN8TC
MOSFET 2N-CH 30V 6.5A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN3A04DN8TC is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6.5A at 25°C. The low on-resistance of 20mOhm at 12.6A and 10V Vgs, coupled with a logic level gate, makes it suitable for battery-powered devices and power management circuits. The ZXMN3A04DN8TC is housed in an 8-SOIC (0.154"", 3.90mm Width) surface mount package, available on tape and reel. Key parameters include a maximum power dissipation of 1.81W and an operating temperature range of -55°C to 150°C. The gate charge (Qg) is 36.8nC (Max) at 10V, and input capacitance (Ciss) is 1890pF (Max) at 15V. This device finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.81W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36.8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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