ZXMN2A04DN8TC
MOSFET 2N-CH 20V 5.9A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN2A04DN8TC is a dual N-channel MOSFET array designed for surface mounting. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 5.9A at 25°C. The low on-resistance of 25mOhm is specified at 5.9A and 4.5V Vgs. With a logic level gate, this device offers a gate charge of 22.1nC maximum at 5V and input capacitance of 1880pF maximum at 10V. The ZXMN2A04DN8TC is packaged in an 8-SOIC (0.154", 3.90mm Width) and operates within a temperature range of -55°C to 150°C. It is supplied in Tape & Reel (TR) packaging and dissipates a maximum power of 1.8W. Applications include automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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