ZXMN10A08DN8TC
MOSFET 2N-CH 100V 1.6A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMN10A08DN8TC is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.6A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 250mOhm maximum at 3.2A and 10V Vgs, with a logic level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 7.7nC maximum at 10V and input capacitance (Ciss) of 405pF maximum at 50V. The device is housed in an 8-SOIC package, suitable for surface mounting, and supports a maximum power dissipation of 1.25W. Operating temperature ranges from -55°C to 150°C. This component is utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 50V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 3.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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