ZXMHN6A07T8TA
MOSFET 4N-CH 60V 1.4A SM8Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMHN6A07T8TA is a discrete MOSFET array featuring four N-channel enhancement mode transistors. This device offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 1.4A at 25°C. The ZXMHN6A07T8TA is designed with a logic level gate, simplifying drive requirements. Its on-resistance (Rds On) is specified at a maximum of 300mOhm when driven at 1.8A with a 10V gate-source voltage (Vgs). With a gate charge (Qg) of 3.2nC at 10V and input capacitance (Ciss) of 166pF at 40V, this component is suitable for various switching applications. The array is housed in a SOT-223-8 (SM8) surface mount package and is supplied on tape and reel. It operates across an extended temperature range of -55°C to 150°C. This MOSFET array finds application in power management, motor control, and battery charging circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-223-8 |
| Mounting Type | Surface Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SM8 |
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