ZXMD65P03N8TA
MOSFET 2P-CH 30V 3.8A 8-SOICManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated ZXMD65P03N8TA is a dual P-channel MOSFET array packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration. This component offers a continuous drain current (Id) of 3.8A at 25°C and a drain-to-source voltage (Vdss) of 30V. With a maximum power dissipation of 1.25W, the ZXMD65P03N8TA features a typical Rds On of 55mOhm at 4.9A and 10V. Key gate parameters include a Qg (Max) of 25.7nC at 10V and an input capacitance (Ciss) of 930pF at 25V. The threshold voltage (Vgs(th) Max) is 1V at 250µA. This device is commonly utilized in power management and switching applications across various industries. The product is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 25V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25.7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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