ZXMD63N03XTA
MOSFET 2N-CH 30V 2.3A 8MSOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Diodes Incorporated ZXMD63N03XTA is a dual N-channel MOSFET array designed for surface mounting. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. Featuring logic-level gate operation, it has a maximum on-resistance (Rds On) of 135mOhm at 1.7A and 10V. The ZXMD63N03XTA exhibits a typical gate charge (Qg) of 8nC at 10V and input capacitance (Ciss) of 290pF at 25V. With a maximum power dissipation of 1.04W, it operates across a temperature range of -55°C to 150°C. Packaged in an 8-MSOP (8-TSSOP) as a Tape & Reel (TR), this component finds application in power management, battery charging, and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.04W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-MSOP |
Request a Quote
Clients Also Buy
DMC3060LVT-13
MOSFET N/P-CH 30V 3.6A TSOT23-6
DMC1030UFDB-13
MOSFET N/P-CH 12V 5.1A 6UDFN
DMN62D0UDWQ-13
MOSFET 2N-CH 60V 0.35A SOT363
