ZXMD63N02XTA
MOSFET 2N-CH 20V 2.5A 8MSOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMD6302XTA is a dual N-channel MOSFET designed for compact power management applications. This device features a 20V drain-source breakdown voltage and can sustain a continuous drain current of 2.5A at 25°C. The low on-resistance of 130mOhm is specified at 1.7A drain current and 4.5V gate-source voltage, indicating efficient conduction. With a logic-level gate, it is suitable for direct drive from low-voltage microcontrollers. The ZXMD6302XTA is packaged in an 8-MSOP, a surface-mount form factor optimized for high-density board layouts. Key electrical characteristics include a maximum gate charge of 6nC at 4.5V and an input capacitance (Ciss) of 700pF at 15V. This MOSFET array finds application in battery management, portable electronics, and power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.04W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MSOP |
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