ZXMD63C03XTC
MOSFET N/P-CH 30V 8MSOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMD63C03XTC is a two-channel MOSFET array featuring N-channel and P-channel transistors within an 8-MSOP package. This device offers a Drain-Source Voltage (Vdss) of 30V and a maximum power dissipation of 1.04W. The MOSFETs are constructed using Metal Oxide technology and include a Logic Level Gate feature. Key parameters include a typical Rds On of 135mOhm at 1.7A and 10V, with a gate charge (Qg) of 8nC at 10V. Input capacitance (Ciss) is specified at a maximum of 290pF at 25V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, battery charging, and load switching applications across various industries. The ZXMD63C03XTC is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.04W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-MSOP |
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