ZXMD63C03XTA
MOSFET N/P-CH 30V 8MSOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMD63C03XTA is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a maximum Power Dissipation of 1.04W. The MOSFET array is constructed using advanced trench technology, offering low Rds(on) of 135mOhm at 1.7A and 10V Vgs, minimizing conduction losses. With a logic-level gate, it is suitable for direct interface with microcontrollers. Key electrical parameters include a Gate Charge (Qg) of 8nC (max) at 10V and Input Capacitance (Ciss) of 290pF (max) at 25V. The ZXMD63C03XTA is available in a compact 8-MSOP package, ideal for space-constrained designs. This component is commonly utilized in consumer electronics, power management ICs, and battery protection circuits. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.04W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-MSOP |
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