ZXMD63C02XTC
MOSFET N/P-CH 20V 8MSOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMD63C02XTC is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This device features a 20V drain-source breakdown voltage and a low Rds(on) of 130mOhm at 1.7A and 4.5V Vgs. The logic-level gate drive simplifies interface requirements with low-voltage microcontrollers. With a maximum power dissipation of 1.04W and a compact 8-MSOP package, the ZXMD63C02XTC is suitable for power management solutions in portable electronics, automotive systems, and industrial control. Key electrical parameters include a gate charge (Qg) of 6nC at 4.5V and an input capacitance (Ciss) of 350pF at 15V. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.04W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 15V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-MSOP |
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