ZXMC4A16DN8TC
MOSFET N/P-CH 40V 5.2A/4.7A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated ZXMC4A16DN8TC is a complementary N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This device features a 40V Drain-Source voltage rating and offers continuous drain currents of 5.2A for the N-channel and 4.7A for the P-channel at 25°C ambient. The low on-resistance, specified as 50mOhm at 4.5A and 10V for the N-channel and 60mOhm at 3.8A and 10V for the P-channel, minimizes conduction losses. It includes logic-level gate drive capability and a maximum gate charge of 17nC at 10V. The ZXMC4A16DN8TC is packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting and supports a maximum power dissipation of 2.1W. This component is suitable for applications in automotive, industrial, and consumer electronics requiring space-efficient power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 4.7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 40V, 1000pF @ 20V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250mA (Min) |
| Supplier Device Package | 8-SO |
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