ZXMC4A16DN8TA
MOSFET N/P-CH 40V 5.2A/4.7A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMC4A16DN8TA is a complementary N-channel and P-channel MOSFET array designed for demanding applications. This 40V device features a low Rds(on) of 50mOhm at 4.5A, 10V for the N-channel and 60mOhm at 3.8A, 10V for the P-channel, ensuring efficient power switching. The ZXMC4A16DN8TA supports a continuous drain current of 5.2A for the N-channel and 4.7A for the P-channel at 25°C, with a maximum power dissipation of 2.1W. Its logic level gate technology simplifies drive requirements. The device is housed in an 8-SOIC package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET array is suitable for power management and motor control applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 4.7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 40V, 1000pF @ 20V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250mA (Min) |
| Supplier Device Package | 8-SO |
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