ZXMC3AM832TA
MOSFET N/P-CH 30V 2.9A/2.1A 8MLPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated ZXMC3AM832TA is a MOSFET array featuring both N-channel and P-channel devices within a compact 8-MLP (3x2) package. This component offers a drain-source voltage (Vdss) of 30V, with continuous drain current (Id) ratings of 2.9A for the N-channel and 2.1A for the P-channel at 25°C. The array is designed with logic level gate functionality, a gate charge (Qg) of 3.9nC (max) at 10V, and input capacitance (Ciss) of 190pF (max) at 25V. On-resistance (Rds On) is specified at 120mOhm maximum for the N-channel device when Id is 2.5A and Vgs is 10V. The ZXMC3AM832TA supports a maximum power dissipation of 1.7W and is supplied in Tape & Reel (TR) packaging, suitable for surface mount applications. This MOSFET array finds utility in power management solutions across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-MLP (3x2) |
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