ZXMC3A18DN8TA
MOSFET N/P-CH 30V 5.8A/4.8A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMC3A18DN8TA is a surface mount MOSFET array featuring both N-channel and P-channel configurations. This component offers a 30V drain-to-source voltage and continuous drain currents of 5.8A for the N-channel and 4.8A for the P-channel. The device operates with a logic-level gate and boasts a low Rds(on) of 25mOhm at 5.8A and 10V. Key parameters include a gate charge of 36nC (max) at 10V and input capacitance of 1800pF (max) at 25V. The ZXMC3A18DN8TA is packaged in an 8-SOIC (0.154", 3.90mm width) and supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET array is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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