ZXMC3A17DN8TC
MOSFET N/P-CH 30V 4.1A/3.4A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZXMC3A17DN8TC is a MOSFET array featuring both N-channel and P-channel configurations. This device offers a drain-to-source voltage (Vdss) of 30V with continuous drain currents (Id) of 4.1A for the N-channel and 3.4A for the P-channel, both specified at 25°C. The array is designed with a logic level gate, simplifying driving requirements. Key electrical parameters include a maximum on-resistance (Rds On) of 50mOhm at 7.8A and 10V, and a maximum gate charge (Qg) of 12.2nC at 10V. Input capacitance (Ciss) is a maximum of 600pF at 25V. This component is provided in an 8-SOIC package, suitable for surface mounting and supplied on tape and reel. Its maximum power dissipation is 1.25W, and it operates across a temperature range of -55°C to 150°C. This MOSFET array is utilized in applications such as power management and battery protection.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 7.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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