ZDM4206NTA
MOSFET 2N-CH 60V 1A SM8Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated ZDM4206NTA is a dual N-channel MOSFET array designed for high-efficiency switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C, with a maximum power dissipation of 2.75W. The MOSFET array is offered in a surface mount SM8 package (SOT-223-8) and utilizes Tape & Reel (TR) packaging. Key electrical characteristics include a low on-resistance (Rds On) of 1 Ohm maximum at 1.5A and 10V, and a logic level gate for compatibility with lower voltage control signals. Input capacitance (Ciss) is specified at 100pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in industrial automation, consumer electronics, and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-223-8 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.75W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | SM8 |
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