HTMN5130SSD-13
MOSFET 2N-CH 55V 2.6A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated HTMN5130SSD-13 is a 2 N-channel MOSFET array in an 8-SO package. This device features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 2.6A at 25°C. The Rds(On) is a maximum of 130mOhm at 3A, 10V, with a maximum power dissipation of 1.7W. Key parameters include a gate charge (Qg) of 8.9nC (max) at 10V and input capacitance (Ciss) of 218.7pF (max) at 25V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in consumer electronics and industrial automation. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 218.7pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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