DMTH6015LDVW-7
MOSFET 2N-CH 60V 9.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMTH6015LDVW-7 is a dual N-channel MOSFET array featuring a 60V drain-to-source breakdown voltage. This component offers a continuous drain current of 9.2A at 25°C ambient and 24.5A at 25°C case temperature, with a maximum power dissipation of 1.46W at 25°C ambient. The device exhibits a low on-resistance of 20.5mOhm at 10A and 10V gate-source voltage.
Key electrical characteristics include a maximum gate charge of 14.3nC at 10V and a maximum input capacitance of 825pF at 30V drain-source voltage. The DMTH6015LDVW-7 is supplied in the PowerDI3333-8 (Type UXD) package for surface mounting, suitable for demanding applications. The MOSFET array operates across a temperature range of -55°C to 175°C (junction). This component is commonly utilized in power management, automotive, and industrial automation systems. The device is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.46W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 24.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 30V |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
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