DMTH6015LDVW-13
MOSFET 2N-CH 60V 9.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMTH6015LDVW-13 is a dual N-channel MOSFET array with a Vdss of 60V. This component offers a continuous drain current of 9.2A at ambient temperature and 24.5A at case temperature, with a maximum power dissipation of 1.46W at ambient temperature. The device features a low Rds(on) of 20.5mOhm at 10A, 10V, and a gate charge of 14.3nC at 10V. Input capacitance (Ciss) is a maximum of 825pF at 30V. The DMTH6015LDVW-13 is housed in a PowerDI3333-8 (Type UXD) surface mount package and operates within a temperature range of -55°C to 175°C. This MOSFET array is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.46W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 24.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 30V |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
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