DMTH4014LDVWQ-7
MOSFET 2N-CH 40V 10.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMTH4014LDVWQ-7 is a dual N-channel MOSFET array designed for demanding applications. This AEC-Q101 qualified component features a 40V drain-source voltage rating and a continuous drain current capability of 10.2A at ambient temperature and 27.5A at case temperature. With a low on-resistance of 15mOhm at 20A and 10V, it offers efficient power switching. The component is housed in an 8-PowerVDFN package, specifically the PowerDI3333-8 (Type UXD) footprint, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 11.2nC and input capacitance of 750pF. The DMTH4014LDVWQ-7 operates across a wide temperature range of -55°C to 175°C (TJ) and is rated for a maximum power dissipation of 1.16W (Ta). This MOSFET array is commonly utilized in automotive power management and control systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.16W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 27.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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