DMTH4014LDVWQ-13
MOSFET 2N-CH 40V 10.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMTH4014LDVWQ-13. This automotive-grade MOSFET array features two N-channel enhancement mode transistors, each with a Drain-Source Voltage (Vdss) of 40V. Optimized for power management, it offers a continuous drain current of 10.2A at ambient temperature (Ta) and 27.5A at case temperature (Tc). The DMTH4014LDVWQ-13 boasts a low on-resistance of 15mOhm maximum at 20A and 10V Vgs, with a maximum gate charge (Qg) of 11.2nC at 10V. Input capacitance (Ciss) is rated at 750pF maximum at 20V Vds. Packaged in an 8-PowerVDFN (PowerDI3333-8 Type UXD) surface-mount configuration, it is supplied on tape and reel. This component is suitable for demanding automotive applications, operating within a temperature range of -55°C to 175°C. It meets AEC-Q101 qualification standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.16W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 27.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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