DMTH4014LDVW-7
MOSFET 2N-CH 40V 10.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMTH4014LDVW-7 is a dual N-channel MOSFET array featuring a 40V drain-to-source voltage (Vdss). This component offers a continuous drain current of 10.2A at ambient temperature (Ta) and 27.5A at case temperature (Tc), with a maximum power dissipation of 1.16W (Ta). The MOSFET array boasts a low on-resistance of 15mOhm at 20A and 10V (Vgs). Key electrical characteristics include a maximum gate charge (Qg) of 11.2nC at 10V and a maximum input capacitance (Ciss) of 750pF at 20V. The device operates over an extended temperature range of -55°C to 175°C (TJ). Packaged in the compact PowerDI3333-8 (Type UXD) surface mount configuration, it is supplied on tape and reel. This MOSFET array is suitable for applications in power management, automotive systems, and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.16W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 27.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
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