DMTH4014LDVW-13
MOSFET 2N-CH 40V 10.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Diodes Incorporated offers the DMTH4014LDVW-13, a dual N-channel MOSFET array designed for robust performance in demanding applications. This component features a 40V drain-to-source voltage (Vdss) and supports continuous drain currents of 10.2A at ambient temperature and 27.5A at case temperature. The low on-resistance (Rds On) of 15mOhm at 20A and 10V gate-source voltage (Vgs) ensures efficient power delivery. Key electrical parameters include a gate charge (Qg) of 11.2nC (max) and input capacitance (Ciss) of 750pF (max). Packaged in an 8-PowerVDFN (PowerDI3333-8 Type UXD) for surface mounting, this MOSFET array operates across a wide temperature range from -55°C to 175°C. Its specifications make it suitable for use in automotive, industrial, and power management systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.16W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 27.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
Request a Quote
Clients Also Buy
DMN62D0UDWQ-13
MOSFET 2N-CH 60V 0.35A SOT363
DMN2004VK-7B
MOSFET 2N-CH 20V 0.54A SOT563
ZXMC3A16DN8QTA
MOSFET N/P-CH 30V 6.4A/5.4A 8SO
