DMT47M2LDV-13
MOSFET 2N-CH 40V 11.9A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMT47M2LDV-13 is a 40V, 2 N-channel MOSFET array designed for surface mount applications. This dual MOSFET configuration features a continuous drain current of 11.9A at ambient temperature and 30.2A at case temperature, with a maximum power dissipation of 2.34W (Ta) and 14.8W (Tc). The low on-resistance of 10.8mOhm at 20A and 10V, coupled with a Vgs(th) of 2.3V at 250µA, makes it suitable for high-efficiency power switching. Key parameters include a gate charge of 14nC (max) and input capacitance of 891pF (max). Packaged in a PowerDI3333-8 (Type UXC) with Tape & Reel (TR) packaging, this component is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.34W (Ta), 14.8W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Ta), 30.2A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 891pF @ 20V |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXC) |
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