DMT4031LSD-13
MOSFET 2N-CH 40V 6.3A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMT4031LSD-13 is a dual N-channel MOSFET array packaged in an 8-SOIC (0.154", 3.90mm Width) case, supplied on tape and reel. This device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.3A at 25°C. The on-resistance (Rds On) is specified at 23mOhm maximum at 6A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 7nC maximum at 10V and input capacitance (Ciss) of 362pF maximum at 20V. The maximum power dissipation is 1.2W. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 362pF @ 20V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
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