DMT3022UEV-7
MOSFET 2N-CH 30V 17A POWERDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMT3022UEV-7 is a 30V, dual N-channel MOSFET array in a PowerDI3333-8 (Type UXD) package. This surface mount component offers a continuous drain current of 17A (Tc) with a low on-resistance of 22mOhm at 11A and 10V. Key parameters include a Vgs(th) of 1.8V (max) at 250µA, a gate charge Qg of 13.9nC (max) at 10V, and input capacitance Ciss of 903pF (max) at 15V. Power dissipation is rated at 900mW (Ta). This device is suitable for applications in automotive, industrial, and consumer electronics. The component is supplied on a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 903pF @ 15V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13.9nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXD) |
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